? 2007 ixys corporation, all rights reserved ds99796 (02/07) symbol test conditions maximum ratings v dss t j = 25c to 175c 150 v v dgr t j = 25c to 175c; r gs = 1 m 150 v v gsm transient 30 v i d25 t c = 25c 130 a i lrms lead current limit, rms 75 a i dm t c = 25c, pulse width limited by t jm 330 a i ar t c = 25c 5 a e as t c = 25c 1.2 j dv/dt i s i dm , di/dt 100 a/ms, v dd v dss 3 v/ns t j 175c, r g = 2.5 p d t c = 25c 750 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 1 ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , notes 1, 2 10 12 m trenchhv tm power mosfet n-channel enhancement mode avalanche rated IXTH130N15T ixtq130n15t v dss = 150 v i d25 = 130 a r ds(on) 12 m to-3p (ixtq) g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) preliminary technical information features z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXTH130N15T ixtq130n15t symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 60 100 s c iss 9800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1450 pf c rss 320 pf t d(on) resistive switching times 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 16 ns t d(off) r g = 2.5 (external) 57 n s t f 27 ns q g(on) 113 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 32 nc q gd 31 nc r thjc 0.20 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25c unless otherwise specified) min. typ. max. i s v gs = 0 v 130 a i sm pulse width limited by t jm 330 a v sd i f = 50 a, v gs = 0 v, note 1 1.2 v t rr i f = 50 a, -di/dt = 100 a/ s 100 ns v r = 25 v, v gs = 0 v notes: 1. pulse test, t 300 ms, duty cycle, d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ?p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2007 ixys corporation, all rights reserved IXTH130N15T ixtq130n15t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 65a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 130a i d = 65a fig. 5. r ds(on) normalized to i d = 65a value vs. drain current 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTH130N15T ixtq130n15t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.544.555.566.57 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 q g - nanocoulombs v gs - volts v ds = 75v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved ixys ref: t_130n15t (7w) 01-31-07.xls IXTH130N15T ixtq130n15t fig. 14. resistive turn-on rise time vs. drain current 11 12 13 14 15 16 17 60 70 80 90 100 110 120 130 i d - amperes t r - nanoseconds r g = 2.5 v gs = 15v v ds = 75v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 11 13 15 17 19 21 23 25 2345678910 r g - ohms t r - nanoseconds 22 23 24 25 26 27 28 29 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 75v i d = 130a i d = 65a fig. 16. resistive turn-off switching times vs. junction temperature 14 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.5 , v gs = 15v v ds = 75v i d = 130a i d = 65a fig. 17. resistive turn-off switching times vs. drain current 14 16 18 20 22 24 26 28 60 70 80 90 100 110 120 130 i d - amperes t f - nanoseconds 40 44 48 52 56 60 64 68 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.5 , v gs = 15v v ds = 75v t j = 125oc t j = 25oc t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 11 12 13 14 15 16 17 18 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2.5 v gs = 15v v ds = 75v 65a < i d < 130a fig. 18. resistive turn-off switching times vs. gate resistance 10 15 20 25 30 35 40 45 50 55 60 2345678910 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 75v i d = 65a, 130a
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